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Other articles related with "TiN capping layer"：
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87305 |
Hao Xu(徐昊), Hong Yang(杨红), Wei-Chun Luo(罗维春), Ye-Feng Xu(徐烨峰), Yan-Rong Wang(王艳蓉), Bo Tang(唐波), Wen-Wu Wang(王文武), Lu-Wei Qi(祁路伟), Jun-Feng Li(李俊峰), Jiang Yan(闫江), Hui-Long Zhu(朱慧珑), Chao Zhao(赵超), Da-Peng Chen(陈大鹏), Tian-Chun Ye(叶甜春) |
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Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations |
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Chin. Phys. B
2016 Vol.25 (8): 87305-087305
[Abstract]
(600)
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[PDF 1174 KB]
(558)
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